Order Article Reprints

Jevasuwan W, Urabe Y, Maeda T, Miyata N, Yasuda T, Yamada H, Hata M, Taoka N, Takenaka M, Takagi S. Initial Processes of Atomic Layer Deposition of Al₂O₃ on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials. 2012; 5(3):404-414. https://doi.org/10.3390/ma5030404

Jevasuwan, Wipakorn, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Masahiko Hata, Noriyuki Taoka, Mitsuru Takenaka, and Shinichi Takagi. 2012. "Initial Processes of Atomic Layer Deposition of Al₂O₃ on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance" Materials 5, no. 3: 404-414. https://doi.org/10.3390/ma5030404

Jevasuwan, W., Urabe, Y., Maeda, T., Miyata, N., Yasuda, T., Yamada, H., Hata, M., Taoka, N., Takenaka, M., & Takagi, S. (2012). Initial Processes of Atomic Layer Deposition of Al₂O₃ on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials, 5(3), 404-414. https://doi.org/10.3390/ma5030404