Jevasuwan, W.; Urabe, Y.; Maeda, T.; Miyata, N.; Yasuda, T.; Yamada, H.; Hata, M.; Taoka, N.; Takenaka, M.; Takagi, S.
Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials 2012, 5, 404-414.
https://doi.org/10.3390/ma5030404
AMA Style
Jevasuwan W, Urabe Y, Maeda T, Miyata N, Yasuda T, Yamada H, Hata M, Taoka N, Takenaka M, Takagi S.
Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials. 2012; 5(3):404-414.
https://doi.org/10.3390/ma5030404
Chicago/Turabian Style
Jevasuwan, Wipakorn, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Masahiko Hata, Noriyuki Taoka, Mitsuru Takenaka, and Shinichi Takagi.
2012. "Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance" Materials 5, no. 3: 404-414.
https://doi.org/10.3390/ma5030404
APA Style
Jevasuwan, W., Urabe, Y., Maeda, T., Miyata, N., Yasuda, T., Yamada, H., Hata, M., Taoka, N., Takenaka, M., & Takagi, S.
(2012). Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance. Materials, 5(3), 404-414.
https://doi.org/10.3390/ma5030404
