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Open AccessArticle

Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

1
Physics Department, Faculty of Science, National University of Singapore, 117542, Singapore
2
Institute for Synchrotron Radiation, Karlsruhe Institute of Technology, 76344, Germany
3
SPring-8/JASRI, Hyogo, 679-5198, Japan
4
NanoCore, National University of Singapore, 117576, Singapore
5
Singapore Synchrotron Light Source, National University of Singapore, 117603, Singapore
*
Author to whom correspondence should be addressed.
Materials 2010, 3(6), 3642-3653; https://doi.org/10.3390/ma3063642
Received: 20 April 2010 / Revised: 27 May 2010 / Accepted: 3 June 2010 / Published: 9 June 2010
(This article belongs to the Special Issue Ferromagnetic Semiconductors)
We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 µB/Ti. View Full-Text
Keywords: DMS; XAFS; ZnO; vacancy; Ti DMS; XAFS; ZnO; vacancy; Ti
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Yong, Z.; Liu, T.; Uruga, T.; Tanida, H.; Qi, D.; Rusydi, A.; Wee, A.T.S. Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties. Materials 2010, 3, 3642-3653.

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