Article Versions Notes

Huang Q, Guo Y, Wang A, Bai Z, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q. Study of ZrO₂ Gate Dielectric with Thin SiO₂ Interfacial Layer in 4H-SiC Trench MOS Capacitors. Materials. 2025; 18(8):1741. https://doi.org/10.3390/ma18081741

Huang, Qimin, Yunduo Guo, Anfeng Wang, Zhaopeng Bai, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, and Qingchun Zhang. 2025. "Study of ZrO₂ Gate Dielectric with Thin SiO₂ Interfacial Layer in 4H-SiC Trench MOS Capacitors" Materials 18, no. 8: 1741. https://doi.org/10.3390/ma18081741

Huang, Q., Guo, Y., Wang, A., Bai, Z., Gu, L., Wang, Z., Ding, C., Shen, Y., Ma, H., & Zhang, Q. (2025). Study of ZrO₂ Gate Dielectric with Thin SiO₂ Interfacial Layer in 4H-SiC Trench MOS Capacitors. Materials, 18(8), 1741. https://doi.org/10.3390/ma18081741