Huang, Q.; Guo, Y.; Wang, A.; Bai, Z.; Gu, L.; Wang, Z.; Ding, C.; Shen, Y.; Ma, H.; Zhang, Q.
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors. Materials 2025, 18, 1741.
https://doi.org/10.3390/ma18081741
AMA Style
Huang Q, Guo Y, Wang A, Bai Z, Gu L, Wang Z, Ding C, Shen Y, Ma H, Zhang Q.
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors. Materials. 2025; 18(8):1741.
https://doi.org/10.3390/ma18081741
Chicago/Turabian Style
Huang, Qimin, Yunduo Guo, Anfeng Wang, Zhaopeng Bai, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, and Qingchun Zhang.
2025. "Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors" Materials 18, no. 8: 1741.
https://doi.org/10.3390/ma18081741
APA Style
Huang, Q., Guo, Y., Wang, A., Bai, Z., Gu, L., Wang, Z., Ding, C., Shen, Y., Ma, H., & Zhang, Q.
(2025). Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors. Materials, 18(8), 1741.
https://doi.org/10.3390/ma18081741
