Yao, Y.-J.; Fu, Y.-M.; Chen, Y.-H.; Wei, C.-Y.; Huang, K.-T.; Luo, G.-L.; Hou, F.-J.; Lai, Y.-S.; Wu, Y.-C.
Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH3 Plasma-Optimized Interfaces. Materials 2025, 18, 1740.
https://doi.org/10.3390/ma18081740
AMA Style
Yao Y-J, Fu Y-M, Chen Y-H, Wei C-Y, Huang K-T, Luo G-L, Hou F-J, Lai Y-S, Wu Y-C.
Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH3 Plasma-Optimized Interfaces. Materials. 2025; 18(8):1740.
https://doi.org/10.3390/ma18081740
Chicago/Turabian Style
Yao, Yi-Ju, Yu-Min Fu, Yu-Hung Chen, Chen-You Wei, Kai-Ting Huang, Guang-Li Luo, Fu-Ju Hou, Yu-Sheng Lai, and Yung-Chun Wu.
2025. "Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH3 Plasma-Optimized Interfaces" Materials 18, no. 8: 1740.
https://doi.org/10.3390/ma18081740
APA Style
Yao, Y.-J., Fu, Y.-M., Chen, Y.-H., Wei, C.-Y., Huang, K.-T., Luo, G.-L., Hou, F.-J., Lai, Y.-S., & Wu, Y.-C.
(2025). Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet Gate-All-Around Field-Effect Transistors with NH3 Plasma-Optimized Interfaces. Materials, 18(8), 1740.
https://doi.org/10.3390/ma18081740
