Article Versions Notes

Ge S, Sang D, Li C, Shi Y, Wang C, Yu C, Wang G, Xi H, Wang Q. High-Temperature Optoelectronic Transport Behavior of n-TiO₂ Nanoball–Stick/p-Lightly Boron-Doped Diamond Heterojunction. Materials. 2025; 18(2):303. https://doi.org/10.3390/ma18020303

Ge, Shunhao, Dandan Sang, Changxing Li, Yarong Shi, Cong Wang, Chunshuai Yu, Guangyu Wang, Hongzhu Xi, and Qinglin Wang. 2025. "High-Temperature Optoelectronic Transport Behavior of n-TiO₂ Nanoball–Stick/p-Lightly Boron-Doped Diamond Heterojunction" Materials 18, no. 2: 303. https://doi.org/10.3390/ma18020303

Ge, S., Sang, D., Li, C., Shi, Y., Wang, C., Yu, C., Wang, G., Xi, H., & Wang, Q. (2025). High-Temperature Optoelectronic Transport Behavior of n-TiO₂ Nanoball–Stick/p-Lightly Boron-Doped Diamond Heterojunction. Materials, 18(2), 303. https://doi.org/10.3390/ma18020303