Next Article in Journal
Review of Approaches to Minimise the Cost of Simulation-Based Optimisation for Liquid Composite Moulding Processes
Previous Article in Journal
New Minerals from Inclusions in Corundum Xenocrysts from Mt. Carmel, Israel: Magnéliite, Ziroite, Sassite, Mizraite-(Ce) and Yeite
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Materials
Volume 16
Issue 24
10.3390/ma16247579
materials-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Review

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

by
Roberto Zivieri
1,*,
Stefano Lumetti
2 and
Jérémy Létang
2
1
Consorzio Futuro in Ricerca (CFR), 44122 Ferrara, Italy
2
Silicon Austria Labs, 9524 Villach, Austria
*
Author to whom correspondence should be addressed.
Materials 2023, 16(24), 7579; https://doi.org/10.3390/ma16247579
Submission received: 9 November 2023 / Revised: 4 December 2023 / Accepted: 6 December 2023 / Published: 9 December 2023
(This article belongs to the Section Materials Chemistry)
Browse Figures
Versions Notes

Abstract

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials—the topological semimetals—has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.
Keywords: topological semimetals; band structure; carrier mobility; magnetotransport properties; magnetoresistance effect; 3D quantum Hall effect; magnetoresistance sensors; high-speed devices; optoelectronic devices; photodetector devices topological semimetals; band structure; carrier mobility; magnetotransport properties; magnetoresistance effect; 3D quantum Hall effect; magnetoresistance sensors; high-speed devices; optoelectronic devices; photodetector devices

Share and Cite

MDPI and ACS Style

Zivieri, R.; Lumetti, S.; Létang, J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials 2023, 16, 7579. https://doi.org/10.3390/ma16247579

AMA Style

Zivieri R, Lumetti S, Létang J. High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials. 2023; 16(24):7579. https://doi.org/10.3390/ma16247579

Chicago/Turabian Style

Zivieri, Roberto, Stefano Lumetti, and Jérémy Létang. 2023. "High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect" Materials 16, no. 24: 7579. https://doi.org/10.3390/ma16247579

APA Style

Zivieri, R., Lumetti, S., & Létang, J. (2023). High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect. Materials, 16(24), 7579. https://doi.org/10.3390/ma16247579

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop