Article Versions Notes

Jeong JH, Kim MG, Ma JH, Park MH, Ha HJ, Kang SJ, Maeng M-J, Kim YD, Park Y, Kang SJ. Improving the Performance of Solution−Processed Quantum Dot Light−Emitting Diodes via a HfO_x Interfacial Layer. Materials. 2022; 15(24):8977. https://doi.org/10.3390/ma15248977

Jeong, Jun Hyung, Min Gye Kim, Jin Hyun Ma, Min Ho Park, Hyoun Ji Ha, Seong Jae Kang, Min-Jae Maeng, Young Duck Kim, Yongsup Park, and Seong Jun Kang. 2022. "Improving the Performance of Solution−Processed Quantum Dot Light−Emitting Diodes via a HfO_x Interfacial Layer" Materials 15, no. 24: 8977. https://doi.org/10.3390/ma15248977

Jeong, J. H., Kim, M. G., Ma, J. H., Park, M. H., Ha, H. J., Kang, S. J., Maeng, M.-J., Kim, Y. D., Park, Y., & Kang, S. J. (2022). Improving the Performance of Solution−Processed Quantum Dot Light−Emitting Diodes via a HfO_x Interfacial Layer. Materials, 15(24), 8977. https://doi.org/10.3390/ma15248977