Marek, J.; Kozarik, J.; Minarik, M.; Chvála, A.; Matus, M.; Donoval, M.; Stuchlikova, L.; Weis, M.
Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress. Materials 2022, 15, 8230.
https://doi.org/10.3390/ma15228230
AMA Style
Marek J, Kozarik J, Minarik M, Chvála A, Matus M, Donoval M, Stuchlikova L, Weis M.
Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress. Materials. 2022; 15(22):8230.
https://doi.org/10.3390/ma15228230
Chicago/Turabian Style
Marek, Juraj, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, and Martin Weis.
2022. "Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress" Materials 15, no. 22: 8230.
https://doi.org/10.3390/ma15228230
APA Style
Marek, J., Kozarik, J., Minarik, M., Chvála, A., Matus, M., Donoval, M., Stuchlikova, L., & Weis, M.
(2022). Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress. Materials, 15(22), 8230.
https://doi.org/10.3390/ma15228230