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Article

VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching

1
School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, D02PD91 Dublin, Ireland
2
Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia
3
Faculty of Physics, Higher School of Economics University, Myasnitskaya Ulitsa, 20, 101000 Moscow, Russia
4
Materials Modeling and Development Laboratory, National University of Science and Technology MISIS, Leninskii Pr. 4, 119991 Moscow, Russia
5
Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilov Str. 38, 119991 Moscow, Russia
*
Author to whom correspondence should be addressed.
Materials 2022, 15(21), 7652; https://doi.org/10.3390/ma15217652
Submission received: 30 September 2022 / Revised: 12 October 2022 / Accepted: 17 October 2022 / Published: 31 October 2022
(This article belongs to the Special Issue Synthesis, Structure and Properties of Metal Oxides)

Abstract

The strongly correlated electron material, vanadium dioxide (VO2), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V2O5(010) single crystal results in Wadsley phases (VnO2n+1, n > 1) and VO2. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO2. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO2 devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V2O5, VO2 and V6O13 crystallites. Percolation paths incorporating both VO2 and metallic V6O13 are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching.
Keywords: metal oxide; vanadium dioxide; vanadium pentoxide; resistive switching; phase transition; single crystalline; oxide reduction metal oxide; vanadium dioxide; vanadium pentoxide; resistive switching; phase transition; single crystalline; oxide reduction

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MDPI and ACS Style

Walls, B.; Murtagh, O.; Bozhko, S.I.; Ionov, A.; Mazilkin, A.A.; Mullarkey, D.; Zhussupbekova, A.; Shulyatev, D.A.; Zhussupbekov, K.; Andreev, N.; et al. VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching. Materials 2022, 15, 7652. https://doi.org/10.3390/ma15217652

AMA Style

Walls B, Murtagh O, Bozhko SI, Ionov A, Mazilkin AA, Mullarkey D, Zhussupbekova A, Shulyatev DA, Zhussupbekov K, Andreev N, et al. VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching. Materials. 2022; 15(21):7652. https://doi.org/10.3390/ma15217652

Chicago/Turabian Style

Walls, Brian, Oisín Murtagh, Sergey I. Bozhko, Andrei Ionov, Andrey A. Mazilkin, Daragh Mullarkey, Ainur Zhussupbekova, Dmitry A. Shulyatev, Kuanysh Zhussupbekov, Nikolai Andreev, and et al. 2022. "VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching" Materials 15, no. 21: 7652. https://doi.org/10.3390/ma15217652

APA Style

Walls, B., Murtagh, O., Bozhko, S. I., Ionov, A., Mazilkin, A. A., Mullarkey, D., Zhussupbekova, A., Shulyatev, D. A., Zhussupbekov, K., Andreev, N., Tabachkova, N., & Shvets, I. V. (2022). VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching. Materials, 15(21), 7652. https://doi.org/10.3390/ma15217652

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