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Journal: Materials, 2022
Volume: 15
Number: 6690

Article: A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
Authors: by Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan and Anant K. Agarwal
Link: https://www.mdpi.com/1996-1944/15/19/6690

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