On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films
Abstract
:1. Introduction
2. Materials and Methods
3. Results
- For film compositions with their total impurity content at 2% (2AZO, 2GZO, and 1A1GZO), at each substrate temperature, the values of the film resistivity of co-doped films were always less than those of the films single-doped with Al but greater than that of the case of single doping of ZnO with Ga, i.e., ρ2GZO < ρ1A1GZO < ρ2GZO;
- By comparison, the co-doped 2A2GZO thin films, in which Al and Ga were simultaneously present in equal amounts at the level of 2%, demonstrated the best values in terms of resistivity.
- Ga-doped ZnO thin films performed better than Al-doped ZnO thin films in terms of their resistivity and mobility;
- In order to achieve the maximum values of electrical performance in Ga-doped ZnO films, it was necessary to carry out sputtering at elevated substrate temperatures (close to 300 °C) and a doping level above 1%;
- The introduction of an additional amount of Al impurity into the ZnO film with 2 at.% Ga further reduced its resistivity, mainly due to an increase in mobility μ.
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Impurity Content in the Target | Thin Film Sample Abbreviation | |
---|---|---|
at.% Al | at.% Ga | |
0 | 0 | ZnO |
1 | 0 | 1AZO |
0 | 1 | 1GZO |
1 | 1 | 1A1GZO |
2 | 0 | 2AZO |
0 | 2 | 2GZO |
2 | 2 | 2A2GZO |
Sample | Data for (002) XRD Peak in Thin Films | ||
---|---|---|---|
I, cps | 2θ, deg | β, deg | |
ZnO | 10,248 | 34.39 | 0.511 |
1AZO | 5155 | 34.33 | 0.572 |
1GZO | 6812 | 34.21 | 0.592 |
1A1GZO | 1905 | 34.31 | 0.636 |
2AZO | 909 | 34.28 | 0.755 |
2GZO | 13,799 | 34.25 | 0.546 |
2A2GZO | 27,436 | 34.24 | 0.279 |
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Asvarov, A.S.; Abduev, A.K.; Akhmedov, A.K.; Kanevsky, V.M. On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films. Materials 2022, 15, 5862. https://doi.org/10.3390/ma15175862
Asvarov AS, Abduev AK, Akhmedov AK, Kanevsky VM. On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films. Materials. 2022; 15(17):5862. https://doi.org/10.3390/ma15175862
Chicago/Turabian StyleAsvarov, Abil S., Aslan K. Abduev, Akhmed K. Akhmedov, and Vladimir M. Kanevsky. 2022. "On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films" Materials 15, no. 17: 5862. https://doi.org/10.3390/ma15175862