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Journal: Materials, 2022
Volume: 15
Number: 5859
Article:
High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors
Authors:
by
Junfan Wang, Haojie Lai, Xiaoli Huang, Junjie Liu, Yueheng Lu, Pengyi Liu and Weiguang Xie
Link:
https://www.mdpi.com/1996-1944/15/17/5859
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