Xu, B.; Du, Y.; Wang, G.; Xiong, W.; Kong, Z.; Zhao, X.; Miao, Y.; Wang, Y.; Lin, H.; Su, J.;
et al. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials 2022, 15, 3594.
https://doi.org/10.3390/ma15103594
AMA Style
Xu B, Du Y, Wang G, Xiong W, Kong Z, Zhao X, Miao Y, Wang Y, Lin H, Su J,
et al. Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials. 2022; 15(10):3594.
https://doi.org/10.3390/ma15103594
Chicago/Turabian Style
Xu, Buqing, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su,
and et al. 2022. "Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate" Materials 15, no. 10: 3594.
https://doi.org/10.3390/ma15103594
APA Style
Xu, B., Du, Y., Wang, G., Xiong, W., Kong, Z., Zhao, X., Miao, Y., Wang, Y., Lin, H., Su, J., Li, B., Wu, Y., & Radamson, H. H.
(2022). Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials, 15(10), 3594.
https://doi.org/10.3390/ma15103594
