Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
Abstract
:1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
- Nakamura, S.; Senoh, M.; Nagahama, S.-I.; Iwasa, N.; Matsushita, T.; Mukai, T. Blue InGaN-based laser diodes with an emission wavelength of 450 nm. Appl. Phys. Lett. 2000, 76, 22–24. [Google Scholar] [CrossRef]
- Zhong, Z.; Lu, S.; Li, J.; Lin, W.; Huang, K.; Li, S.; Cai, D.; Kang, J. Design and fabrication of high power InGaN blue laser diode over 8 W. Opt. Laser Technol. 2021, 139, 106985. [Google Scholar] [CrossRef]
- Nakamura, S.; Mukai, T.; Senoh, M. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 1994, 64, 1687–1689. [Google Scholar] [CrossRef]
- Liu, J.P.; Zhang, L.Q.; Li, D.Y.; Zhou, K.; Cheng, Y.; Zhou, W.; Tian, A.Q.; Ikeda, M.S.; Zhang, S.M.; Yang, H. GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation. IEEE Photonics Technol. Lett. 2017, 29, 2203–2206. [Google Scholar] [CrossRef]
- Narukawa, Y.; Ichikawa, M.; Sanga, D.; Sano, M.; Mukai, T. White light emitting diodes with super-high luminous efficacy. J. Phys. D Appl. Phys. 2010, 43, 354002. [Google Scholar] [CrossRef]
- Nakamura, S.; Senoh, N.; Iwasa, N.; Nagahama, S.I. High-brightness InGaN blue, green and yellow light-emitting-diodes eith quantum-well structures. Jpn. J. Appl. Phys. Part 2 Lett. Express Lett. 1995, 34, L797–L799. [Google Scholar] [CrossRef]
- O’Donnell, K.P.; Auf der Maur, M.; Di Carlo, A.; Lorenz, K.; The Sorbet Consortium. It’s not easy being green: Strategies for all-nitrides, all-colour solid state lighting. Phys. Status Solidi RRL 2012, 6, 49–52. [Google Scholar] [CrossRef]
- Krames, M.R.; Shchekin, O.B.; Mueller-Mach, R.; Mueller, G.O.; Zhou, L.; Harbers, G.; Craford, M.G. Status and future of high-power light-emitting diodes for solid-state lighting. J. Disp. Technol. 2007, 3, 160–175. [Google Scholar] [CrossRef] [Green Version]
- Langer, T.; Kruse, A.; Ketzer, F.A.; Schwiegel, A.; Hoffmann, L.; Jönen, H.; Bremers, H.; Rossow, U.; Hangleiter, A. Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures. Phys. Status Solidi C 2011, 8, 2170–2172. [Google Scholar] [CrossRef]
- Avramescu, A.; Lermer, T.; Müller, J.; Eichler, C.; Bruederl, G.; Sabathil, M.; Lutgen, S.; Strauss, U. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN. Appl. Phys. Express 2010, 3, 061003. [Google Scholar] [CrossRef]
- Chichibu, S.; Azuhata, T.; Sota, T.; Nakamura, S. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures. Appl. Phys. Lett. 1996, 69, 4188–4190. [Google Scholar] [CrossRef]
- Bernardini, F.; Fiorentini, V.; Vanderbilt, D. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B 1997, 56, 10024–10027. [Google Scholar] [CrossRef] [Green Version]
- Enya, Y.; Yoshizumi, Y.; Kyono, T.; Akita, K.; Ueno, M.; Adachi, M.; Sumitomo, T.; Tokuyama, S.; Ikegami, T.; Katayama, K.; et al. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates. Appl. Phys. Express 2009, 2, 082101. [Google Scholar] [CrossRef]
- Yoshizumi, Y.; Adachi, M.; Enya, Y.; Kyono, T.; Tokuyama, S.; Sumitomo, T.; Akita, K.; Ikegami, T.; Ueno, M.; Katayama, K.; et al. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates. Appl. Phys. Express 2009, 2, 092101. [Google Scholar] [CrossRef]
- Takagi, S.; Enya, Y.; Kyono, T.; Adachi, M.; Yoshizumi, Y.; Sumitomo, T.; Yamanaka, Y.; Kumano, T.; Tokuyama, S.; Sumiyoshi, K.; et al. High-Power (over 100 mW) Green Laser Diodes on Semipolar {20-21} GaN Substrates Operating at Wavelengths beyond 530 nm. Appl. Phys. Express 2012, 5, 082102. [Google Scholar] [CrossRef]
- Sizov, D.; Bhat, R.; Heberle, A.; Visovsky, N.; Zah, C.-E. True-green (11-22) plane optically pumped laser with cleaved m-plane facets. Appl. Phys. Lett. 2011, 99, 041117. [Google Scholar] [CrossRef]
- Zhang, J.; Xiong, C.; Liu, J.; Quan, Z.; Wang, L.; Jiang, F. High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate. Appl. Phys. A 2014, 114, 1049–1053. [Google Scholar] [CrossRef]
- Saito, S.; Hashimoto, R.; Hwang, J.; Nunoue, S. InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range. Appl. Phys. Express 2013, 6, 111004. [Google Scholar] [CrossRef]
- Shioda, T.; Yoshida, H.; Tachibana, K.; Sugiyama, N.; Nunoue, S. Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate. Phys. Status Solidi A 2012, 209, 473–476. [Google Scholar] [CrossRef]
- Koleske, D.D.; Fischer, A.J.; Bryant, B.N.; Kotula, P.G.; Wierer, J.J. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers. J. Cryst. Growth 2015, 415, 57–64. [Google Scholar] [CrossRef] [Green Version]
- Al Muyeed, S.A.; Sun, W.; Wei, X.; Song, R.; Koleske, D.D.; Tansu, N.; Wierer, J.J. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers. Aip Adv. 2017, 7, 105312. [Google Scholar] [CrossRef]
- Akasaka, T.; Gotoh, H.; Saito, T.; Makimoto, T. High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers. Appl. Phys. Lett. 2004, 85, 3089–3091. [Google Scholar] [CrossRef]
- Armstrong, A.M.; Bryant, B.N.; Crawford, M.H.; Koleske, D.D.; Lee, S.R.; Wierer, J.J. Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers. J. Appl. Phys. 2015, 117, 134501. [Google Scholar] [CrossRef]
- Haller, C.; Carlin, J.F.; Jacopin, G.; Martin, D.; Butté, R.; Grandjean, N. Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency. Appl. Phys. Lett. 2017, 111, 262101. [Google Scholar] [CrossRef] [Green Version]
- Jiang, F.; Zhang, J.; Xu, L.; Ding, J.; Wang, G.; Wu, X.; Wang, X.; Mo, C.; Quan, Z.; Guo, X.; et al. Efficient InGaN-based yellow-light-emitting diodes. Photonics Res. 2019, 7, 144–148. [Google Scholar] [CrossRef]
- Jiang, X.G.; Zheng, C.D.; Mo, C.L.; Wang, X.L.; Zhang, J.L.; Quan, Z.J.; Liu, J.L.; Jiang, F.Y. Study on the performance of InGaN-based green LED by designing different preparing layers. Opt. Mater. 2019, 89, 505–511. [Google Scholar] [CrossRef]
- Qi, W.J.; Zhang, J.L.; Mo, C.L.; Wang, X.L.; Wu, X.M.; Quan, Z.J.; Wang, G.X.; Pan, S.; Fang, F.; Liu, J.L.; et al. Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates. J. Appl. Phys. 2017, 122, 7. [Google Scholar] [CrossRef]
- Tao, X.; Liu, J.; Zhang, J.; Mo, C.; Xu, L.; Ding, J.; Wang, G.; Wang, X.; Wu, X.; Quan, Z.; et al. Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer. Opt. Mater. Express 2018, 8, 1221–1230. [Google Scholar] [CrossRef]
- Zhou, R.; Ikeda, M.; Zhang, F.; Liu, J.; Zhang, S.; Tian, A.; Wen, P.; Li, D.; Zhang, L.; Yang, H. Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence. Jpn. J. Appl. Phys. 2019, 58, SCCB07. [Google Scholar] [CrossRef]
- Zhou, R.; Ikeda, M.; Zhang, F.; Liu, J.; Zhang, S.; Tian, A.; Wen, P.; Li, D.; Zhang, L.; Yang, H. Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells. J. Appl. Phys. 2020, 127, 013103. [Google Scholar] [CrossRef]
- Haller, C.; Carlin, J.F.; Jacopin, G.; Liu, W.; Martin, D.; Butté, R.; Grandjean, N. GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells. Appl. Phys. Lett. 2018, 113, 111106. [Google Scholar] [CrossRef] [Green Version]
- Armstrong, A.; Henry, T.A.; Koleske, D.D.; Crawford, M.H.; Lee, S.R. Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes. Opt. Express 2012, 20, A812–A821. [Google Scholar] [CrossRef] [PubMed]
- Haller, C.; Carlin, J.-F.; Mosca, M.; Rossell, M.D.; Erni, R.; Grandjean, N. InAlN underlayer for near ultraviolet InGaN based light emitting diodes. Appl. Phys. Express 2019, 12, 034002. [Google Scholar] [CrossRef]
Scheme | Tset(°C) | Growth Rate (nm/s) |
---|---|---|
QW | 830 | 0.033 |
QB | 1005 | 0.063 |
GSL (16% InGaN) | 903 | 0.022 |
GSL (8% InGaN) | 903 | 0.02 |
GSL (4% InGaN) | 903 | 0.018 |
GSL (GaN) | 903 | 0.017 |
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. |
© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Li, X.; Liu, J.; Su, X.; Huang, S.; Tian, A.; Zhou, W.; Jiang, L.; Ikeda, M.; Yang, H. Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells. Materials 2021, 14, 1877. https://doi.org/10.3390/ma14081877
Li X, Liu J, Su X, Huang S, Tian A, Zhou W, Jiang L, Ikeda M, Yang H. Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells. Materials. 2021; 14(8):1877. https://doi.org/10.3390/ma14081877
Chicago/Turabian StyleLi, Xuan, Jianping Liu, Xujun Su, Siyi Huang, Aiqin Tian, Wei Zhou, Lingrong Jiang, Masao Ikeda, and Hui Yang. 2021. "Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells" Materials 14, no. 8: 1877. https://doi.org/10.3390/ma14081877
APA StyleLi, X., Liu, J., Su, X., Huang, S., Tian, A., Zhou, W., Jiang, L., Ikeda, M., & Yang, H. (2021). Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells. Materials, 14(8), 1877. https://doi.org/10.3390/ma14081877