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Review

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

by
Francesco La Via
1,*,
Massimo Zimbone
1,
Corrado Bongiorno
1,
Antonino La Magna
1,
Giuseppe Fisicaro
1,
Ioannis Deretzis
1,
Viviana Scuderi
1,
Cristiano Calabretta
1,
Filippo Giannazzo
1,
Marcin Zielinski
2,
Ruggero Anzalone
3,
Marco Mauceri
4,
Danilo Crippa
4,
Emilio Scalise
5,
Anna Marzegalli
6,
Andrey Sarikov
5,
Leo Miglio
5,
Valdas Jokubavicius
7,
Mikael Syväjärvi
7,
Rositsa Yakimova
7,
Philipp Schuh
8,
Michael Schöler
8,
Manuel Kollmuss
8 and
Peter Wellmann
8,*
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1
Consiglio Nazionale delle Ricerche – Istituto per la Microelettronice e Microsistemi, Strada VIII 5, 95121 Catania, Italy
2
NOVASIC, Savoie Technolac—Arche Bat.4, Allée du Lac d’Aiguebelette, BP 267, 73375 Le Bourget du Lac CEDEX, France
3
STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy
4
LPE, Strada XVI, Pantano d’Arci, 95121 Catania, Italy
5
L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy
6
L-NESS and Department of Physics, Politecnico di Milano, via Anzani 42, 22100 Como, Italy
7
Department of Physics, Chemistry, and Biology (IFM), Linköping University, 581 83 Linköping, Sweden
8
Crystal Growth Lab, Materials Department 6 (i-MEET), Friedrich-Alexander University Erlangen-Nürnberg (FAU), 91058 Erlangen, Germany
*
Authors to whom correspondence should be addressed.
Materials 2021, 14(18), 5348; https://doi.org/10.3390/ma14185348
Submission received: 22 June 2021 / Revised: 30 August 2021 / Accepted: 7 September 2021 / Published: 16 September 2021
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)

Abstract

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.
Keywords: 3C-SiC; heteroepitaxy; bulk growth; compliant substrates; defects; stress 3C-SiC; heteroepitaxy; bulk growth; compliant substrates; defects; stress

Share and Cite

MDPI and ACS Style

La Via, F.; Zimbone, M.; Bongiorno, C.; La Magna, A.; Fisicaro, G.; Deretzis, I.; Scuderi, V.; Calabretta, C.; Giannazzo, F.; Zielinski, M.; et al. New Approaches and Understandings in the Growth of Cubic Silicon Carbide. Materials 2021, 14, 5348. https://doi.org/10.3390/ma14185348

AMA Style

La Via F, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, Calabretta C, Giannazzo F, Zielinski M, et al. New Approaches and Understandings in the Growth of Cubic Silicon Carbide. Materials. 2021; 14(18):5348. https://doi.org/10.3390/ma14185348

Chicago/Turabian Style

La Via, Francesco, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, Cristiano Calabretta, Filippo Giannazzo, Marcin Zielinski, and et al. 2021. "New Approaches and Understandings in the Growth of Cubic Silicon Carbide" Materials 14, no. 18: 5348. https://doi.org/10.3390/ma14185348

APA Style

La Via, F., Zimbone, M., Bongiorno, C., La Magna, A., Fisicaro, G., Deretzis, I., Scuderi, V., Calabretta, C., Giannazzo, F., Zielinski, M., Anzalone, R., Mauceri, M., Crippa, D., Scalise, E., Marzegalli, A., Sarikov, A., Miglio, L., Jokubavicius, V., Syväjärvi, M., ... Wellmann, P. (2021). New Approaches and Understandings in the Growth of Cubic Silicon Carbide. Materials, 14(18), 5348. https://doi.org/10.3390/ma14185348

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