Article Versions Notes

Li J, Li Y, Zhou N, Wang G, Zhang Q, Du A, Zhang Y, Gao J, Kong Z, Lin H, et al. A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm. Materials. 2020; 13(3):771. https://doi.org/10.3390/ma13030771

Li, Junjie, Yongliang Li, Na Zhou, Guilei Wang, Qingzhu Zhang, Anyan Du, Yongkui Zhang, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, and et al. 2020. "A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm" Materials 13, no. 3: 771. https://doi.org/10.3390/ma13030771

Li, J., Li, Y., Zhou, N., Wang, G., Zhang, Q., Du, A., Zhang, Y., Gao, J., Kong, Z., Lin, H., Xiang, J., Li, C., Yin, X., Li, Y., Wang, X., Yang, H., Ma, X., Han, J., Zhang, J., ... Radamson, H. H. (2020). A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm. Materials, 13(3), 771. https://doi.org/10.3390/ma13030771