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Article

Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor

1
Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
2
Faculty of Physics, University of Vienna, 1090 Vienna, Austria
3
Department of Physics and Electrical Engineering, Linnaeus University, SE-391 82 Kalmar, Sweden
*
Author to whom correspondence should be addressed.
Materials 2020, 13(23), 5507; https://doi.org/10.3390/ma13235507
Received: 30 October 2020 / Revised: 25 November 2020 / Accepted: 26 November 2020 / Published: 3 December 2020
(This article belongs to the Special Issue Magnetic Materials and Applications)
Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their magnetotransport properties, has been thoroughly performed. The obtained results are compared with those for the reference (Ga,Mn)As layers, grown under similar conditions, with the aim to reveal an impact of Bi incorporation on the properties of this DMS material. Incorporation of Bi into GaAs strongly enhances the spin-orbit coupling strength in this semiconductor, and the same has been expected for the (Ga,Mn)(Bi,As) alloy. In turn, importantly for specific spintronic applications, strong spin-orbit coupling in ferromagnetic systems opens a possibility of directly controlling the direction of magnetization by the electric current. Our investigations, performed with high-resolution X-ray diffractometry and transmission electron microscopy, demonstrate that the (Ga,Mn)(Bi,As) layers of high structural quality and smooth interfaces can be grown by means of the low-temperature molecular-beam epitaxy method, despite a large difference between the sizes of Bi and As atoms. Depending on the applied buffer layer, the DMS layers can be grown under either compressive or tensile misfit strain, which influences their magnetic properties. It is shown that even small 1% Bi content in the layers strongly affects their magnetoelectric properties, such as the coercive field and anisotropic magnetoresistance. View Full-Text
Keywords: dilute magnetic semiconductors; molecular-beam epitaxy; interfaces; lattice mismatch; Curie temperature; anisotropic magnetoresistance; spin-orbit coupling; spintronics dilute magnetic semiconductors; molecular-beam epitaxy; interfaces; lattice mismatch; Curie temperature; anisotropic magnetoresistance; spin-orbit coupling; spintronics
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MDPI and ACS Style

Andrearczyk, T.; Levchenko, K.; Sadowski, J.; Domagala, J.Z.; Kaleta, A.; Dłużewski, P.; Wróbel, J.; Figielski, T.; Wosinski, T. Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor. Materials 2020, 13, 5507. https://doi.org/10.3390/ma13235507

AMA Style

Andrearczyk T, Levchenko K, Sadowski J, Domagala JZ, Kaleta A, Dłużewski P, Wróbel J, Figielski T, Wosinski T. Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor. Materials. 2020; 13(23):5507. https://doi.org/10.3390/ma13235507

Chicago/Turabian Style

Andrearczyk, Tomasz, Khrystyna Levchenko, Janusz Sadowski, Jaroslaw Z. Domagala, Anna Kaleta, Piotr Dłużewski, Jerzy Wróbel, Tadeusz Figielski, and Tadeusz Wosinski. 2020. "Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor" Materials 13, no. 23: 5507. https://doi.org/10.3390/ma13235507

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