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Journal: Materials, 2020
Volume: 13
Number: 434

Article: Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes
Authors: by Young-Jae Lee, Michael A. Schweitz, Jong-Min Oh and Sang-Mo Koo
Link: https://www.mdpi.com/1996-1944/13/2/434

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