Huang, X.; Yao, Y.; Peng, S.; Zhang, D.; Shi, J.; Jin, Z.
Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors. Materials 2020, 13, 2896.
https://doi.org/10.3390/ma13132896
AMA Style
Huang X, Yao Y, Peng S, Zhang D, Shi J, Jin Z.
Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors. Materials. 2020; 13(13):2896.
https://doi.org/10.3390/ma13132896
Chicago/Turabian Style
Huang, Xinnan, Yao Yao, Songang Peng, Dayong Zhang, Jingyuan Shi, and Zhi Jin.
2020. "Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors" Materials 13, no. 13: 2896.
https://doi.org/10.3390/ma13132896
APA Style
Huang, X., Yao, Y., Peng, S., Zhang, D., Shi, J., & Jin, Z.
(2020). Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors. Materials, 13(13), 2896.
https://doi.org/10.3390/ma13132896