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Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

by Xinnan Huang 1,2, Yao Yao 1,2, Songang Peng 1,2, Dayong Zhang 1,2, Jingyuan Shi 1,2 and Zhi Jin 1,2,*
1
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
*
Author to whom correspondence should be addressed.
Materials 2020, 13(13), 2896; https://doi.org/10.3390/ma13132896
Received: 30 May 2020 / Revised: 19 June 2020 / Accepted: 22 June 2020 / Published: 28 June 2020
(This article belongs to the Section Thin Films)
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2 FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2–SiO2 interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2 FET that is applied in the low power consumption devices and circuits. View Full-Text
Keywords: transition metal dichalcogenides (TMDCs); MoS2 FET; hysteresis; subthreshold swing; interface states transition metal dichalcogenides (TMDCs); MoS2 FET; hysteresis; subthreshold swing; interface states
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Huang, X.; Yao, Y.; Peng, S.; Zhang, D.; Shi, J.; Jin, Z. Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors. Materials 2020, 13, 2896.

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