Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells
Abstract
:1. Introduction
2. Governing Equations and Numerical Method
2.1. Description of the Structure
2.2. Electrical Parameters of the InGaN/GaN MQW-SC
2.3. Poisson-Schrodinger Equations:
2.4. Numerical Method
2.5. Boundary Conditions
3. Results and Discussion
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- The longitudinal profile of the conduction band energy along the growth direction z for the two values of the number of QWs and several values of the temperature;
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- The evolution of the conduction band offset ΔEc versus the temperature for several values of the indium content;
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- The variation of the Fermi energy and the 2DEG distribution at the interface versus the temperature, the indium content and the number of QWs;
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- The variation of the efficiency and short-circuit current density versus the number of QWs, the temperature, and In-content;
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- The dependence of the open circuit voltage versus the temperature.
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Chouchen, B.; Gazzah, M.H.; Bajahzar, A.; Belmabrouk, H. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells. Materials 2019, 12, 1241. https://doi.org/10.3390/ma12081241
Chouchen B, Gazzah MH, Bajahzar A, Belmabrouk H. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells. Materials. 2019; 12(8):1241. https://doi.org/10.3390/ma12081241
Chicago/Turabian StyleChouchen, Bilel, Mohamed Hichem Gazzah, Abdullah Bajahzar, and Hafedh Belmabrouk. 2019. "Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells" Materials 12, no. 8: 1241. https://doi.org/10.3390/ma12081241