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Materials 2019, 12(8), 1241; https://doi.org/10.3390/ma12081241

Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells

1
Quantum and Statistical Physics Laboratory, Faculty of Sciences of Monastir, University of Monastir, Monastir 5019, Tunisia
2
Department of Computer Science and Information, College of Science, Majmaah University, Zulfi 11932, Saudi Arabia
3
Electronics and Microelectronics Laboratory, Faculty of Science of Monastir, University of Monastir, Monastir 5019, Tunisia
4
Department of Physics, College of Science, Majmaah University, Al Zulfi 11932, Saudi Arabia
*
Author to whom correspondence should be addressed.
Received: 17 February 2019 / Revised: 28 March 2019 / Accepted: 10 April 2019 / Published: 16 April 2019
(This article belongs to the Special Issue Materials for Photovoltaic Applications)
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Abstract

In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InxGa1−xN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. The obtained results were 28 mA/cm2 for the short-circuit current density, 1.43 V for the open-circuit voltage, and the obtained conversion efficiency was 31% for a model structure based on 50-period InGaN/GaN-MQW-SC under 1-sun AM1.5G. View Full-Text
Keywords: InGaN/GaN-MQW; solar cells; temperature; polarization; conversion efficiency InGaN/GaN-MQW; solar cells; temperature; polarization; conversion efficiency
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Chouchen, B.; Gazzah, M.H.; Bajahzar, A.; Belmabrouk, H. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells. Materials 2019, 12, 1241.

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