Next Article in Journal
Surface Roughening of Electrolyte Membrane for Pt- and Ru-Sputtered Passive Direct Methanol Fuel Cells
Previous Article in Journal
Bioactive Glass-Based Endodontic Sealer as a Promising Root Canal Filling Material without Semisolid Core Materials
Previous Article in Special Issue
Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal
Open AccessArticle

Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator

School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Korea
*
Author to whom correspondence should be addressed.
Materials 2019, 12(23), 3968; https://doi.org/10.3390/ma12233968
Received: 30 September 2019 / Revised: 14 November 2019 / Accepted: 28 November 2019 / Published: 29 November 2019
The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen–plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD. View Full-Text
Keywords: gallium nitride; heterostructure; in situ SiN; SiO2; oxygen plasma; interface trap gallium nitride; heterostructure; in situ SiN; SiO2; oxygen plasma; interface trap
Show Figures

Figure 1

MDPI and ACS Style

Cho, G.; Cha, H.-Y.; Kim, H. Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator. Materials 2019, 12, 3968.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop