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Journal: Materials, 2019
Volume: 12
Number: 3968

Article: Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator
Authors: by Geunho Cho, Ho-young Cha and Hyungtak Kim
Link: https://www.mdpi.com/1996-1944/12/23/3968

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