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Open AccessArticle

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

State Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, China
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Materials 2018, 11(9), 1761; https://doi.org/10.3390/ma11091761
Received: 21 August 2018 / Revised: 12 September 2018 / Accepted: 14 September 2018 / Published: 18 September 2018
(This article belongs to the Special Issue Thin Film Fabrication and Surface Techniques)
This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications. View Full-Text
Keywords: ZnO thin film transistors; solution process; interfacial modification layers; stability; contact potential barrier ZnO thin film transistors; solution process; interfacial modification layers; stability; contact potential barrier
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MDPI and ACS Style

Wan, L.; He, F.; Qin, Y.; Lin, Z.; Su, J.; Chang, J.; Hao, Y. Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors. Materials 2018, 11, 1761.

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