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Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

by 1,*, 1, 1 and 2,3,*
1
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
2
School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan
3
Center for Nanotechnology in Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(4), 559; https://doi.org/10.3390/ma11040559
Received: 21 February 2018 / Revised: 19 March 2018 / Accepted: 2 April 2018 / Published: 5 April 2018
(This article belongs to the Section Thin Films)
In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses (TIGZO) are investigated. As the TIGZO increased, the turn-on voltage (Von) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (CV) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened. View Full-Text
Keywords: drain current stress; instability; InGaZnO; thin-film transistors; active layer thickness drain current stress; instability; InGaZnO; thin-film transistors; active layer thickness
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MDPI and ACS Style

Wang, D.; Zhao, W.; Li, H.; Furuta, M. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses. Materials 2018, 11, 559.

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