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Journal: Materials, 2018
Volume: 11
Number: 559

Article: Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
Authors: by Dapeng Wang, Wenjing Zhao, Hua Li and Mamoru Furuta
Link: https://www.mdpi.com/1996-1944/11/4/559

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