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Journal: Materials, 2018
Volume: 11
Number: 559
Article:
Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
Authors:
by
Dapeng Wang, Wenjing Zhao, Hua Li and Mamoru Furuta
Link:
https://www.mdpi.com/1996-1944/11/4/559
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