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Open AccessArticle

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode

IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Technische Universität Dresden, Semiconductor and Microsystems Technology Laboratory, 01062 Dresden, Germany
Physics Department E R Caianiello, University of Salerno, via Giovanni Paolo II, I-84084 Fisciano, Salerno, Italy
Medical High School Theodor Fontane, 16816 Neuruppin, Germany
Author to whom correspondence should be addressed.
Materials 2018, 11(3), 345;
Received: 26 January 2018 / Revised: 21 February 2018 / Accepted: 23 February 2018 / Published: 27 February 2018
(This article belongs to the Special Issue Recent Advances in 2D Nanomaterials)
Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors. View Full-Text
Keywords: graphene; amorphous silicon; vertical transistors graphene; amorphous silicon; vertical transistors
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MDPI and ACS Style

Alvarado Chavarin, C.; Strobel, C.; Kitzmann, J.; Di Bartolomeo, A.; Lukosius, M.; Albert, M.; Bartha, J.W.; Wenger, C. Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode. Materials 2018, 11, 345.

AMA Style

Alvarado Chavarin C, Strobel C, Kitzmann J, Di Bartolomeo A, Lukosius M, Albert M, Bartha JW, Wenger C. Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode. Materials. 2018; 11(3):345.

Chicago/Turabian Style

Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann W.; Wenger, Christian. 2018. "Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode" Materials 11, no. 3: 345.

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