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Materials 2018, 11(2), 186;

High-Quality GaSe Single Crystal Grown by the Bridgman Method

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072, China
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
Author to whom correspondence should be addressed.
Received: 7 January 2018 / Revised: 18 January 2018 / Accepted: 22 January 2018 / Published: 24 January 2018
(This article belongs to the Section Thin Films)
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A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the studied GaSe sample is symmetric and the Full Width at Half Maximum (FWHM) is only 46 arcs, which is the smallest value ever reported for GaSe crystals. The IR-transmittance is about 66% in the range from 500 to 4000 cm−1. The photoluminescence spectrum at 9.2 K shows a symmetric and sharp excition peak in 2.1046 eV. The results indicate that the as-grown GaSe crystal is of high crystalline quality. The as-grown ε -GaSe crystal has a p-type conductance with the resistivity of 103 Ω/cm, and the Hall mobility is ~25 cm2 V−1 s−1. Few-layer GaSe crystals were prepared through mechanical exfoliation from this high-quality crystal sample. Few-layer GaSe-based photodetectors were fabricated, which exhibit an on/off ratio of 104, a field-effect differential mobility of 0.4 cm2 V−1 s−1, and have a fast response time less than 60 ms under light illumination. View Full-Text
Keywords: ε-GaSe; crystalline quality; two-dimensional materials; photodetector ε-GaSe; crystalline quality; two-dimensional materials; photodetector

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Wang, T.; Li, J.; Zhao, Q.; Yin, Z.; Zhang, Y.; Chen, B.; Xie, Y.; Jie, W. High-Quality GaSe Single Crystal Grown by the Bridgman Method. Materials 2018, 11, 186.

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