Study of GaN-Based Thermal Decomposition in Hydrogen Atmospheres for Substrate-Reclamation Processing
Abstract
:1. Introduction
2. Experimental Procedures
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
- Steigerwald, D.A.; Bhat, J.C.; Collins, D.; Fletcher, R.M.; Holcomb, M.O.; Ludowise, M.J.; Martin, P.S.; Rudaz, S.L. Illumination with solid state lighting technology. IEEE J. Select. Top. Quantum Electron. 2002, 8, 310–320. [Google Scholar] [CrossRef]
- Colombo, L.; Dolara, A.; Guzzetti, S.; Lazaroiu, G.C.; Leva, S.; Lucchini, A. Thermal and luminous investigations of a pc LED based refrigerating liquid prototype. Appl. Therm. Eng. 2014, 70, 884–891. [Google Scholar] [CrossRef]
- Cheng, H.; Lin, J.; Chen, W. On the thermal characterization of an RGB LED based white light module. Appl. Therm. Eng. 2012, 38, 105–116. [Google Scholar] [CrossRef]
- Jiang, H.; Egawa, T. High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template. Appl. Phys. Lett. 2007, 90, 121121. [Google Scholar] [CrossRef]
- Srour, H.; Salvestrini, J.P.; Ahaitouf, A.; Gautier, S.; Moudakir, T.; Assouar, B.; Abarkan, M.; Hamady, S.; Ougazzaden, A. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Appl. Phys. Lett. 2011, 99, 221101. [Google Scholar] [CrossRef] [Green Version]
- Cherkashinin, G.; Lebedev, V.; Wagner, R.; Cimalla, I.; Ambacher, O. The performance of AlGaN solar blind UV photodetectors: Responsivity and decay time. Phys. Status Solidi B 2006, 243, 1713–1717. [Google Scholar] [CrossRef]
- Munir, Z.A.; Searcy, A.W. Activation energy for the sublimation of gallium nitride. J. Chem. Phys. 1965, 42, 4223. [Google Scholar] [CrossRef]
- Thurmond, C.D.; Logan, R.A. The equilibrium pressure of N2 over GaN. J. Electrochem. Soc. 1972, 119, 622–626. [Google Scholar] [CrossRef]
- Logan, R.A.; Thurmond, C.D. Heteroepitaxial thermal gradient solution growth of GaN. J. Electrochem. Soc. 1972, 119, 1727–1735. [Google Scholar] [CrossRef]
- Koleske, D.D.; Wickenden, A.E.; Henry, R.L.; Culbertson, J.C.; Twigg, M.E. GaN decomposition in H2 and N2 at MOVPE temperatures and pressures. J. Cryst. Growth 2001, 223, 466–483. [Google Scholar] [CrossRef]
- Mastro, M.A.; Kryliouk, O.M.; Reed, M.D.; Anderson, T.J.; Davydov, A.; Shapiro, A. Thermal stability of MOCVD and HVPE GaN layers in H2, HCl, NH3 and N2. Phys. Status Solidi A 2001, 188, 467–471. [Google Scholar] [CrossRef]
- Unland, J.; Onderka, B.; Davydov, A.; Fetzer, R.S. Thermodynamics and phase stability in the Ga–N system. J. Cryst. Growth 2003, 256, 33–51. [Google Scholar] [CrossRef]
- Mastro, M.A.; Kryliouk, O.M.; Anderson, T.J.; Davydov, A.; Shapiro, A. Influence of polarity on GaN thermal stability. J. Cryst. Growth 2005, 274, 38–46. [Google Scholar] [CrossRef]
- Peshek, T.J.; Angus, J.C.; Kash, K. Thermodynamic properties of gallium nitride. J. Cryst. Growth 2011, 322, 114–116. [Google Scholar] [CrossRef]
- Fahle, D.; Kruecken, T.; Dauelsberg, M.; Kalisch, H.; Heuken, M.; Vescan, A. In-situ decomposition and etching of AlN and GaN in the presence of HCl. J. Cryst. Growth 2014, 393, 89–92. [Google Scholar] [CrossRef]
- Bouazizi, H.; Chaaben, N.; Gmili, Y.E.; Bchetnia, A.; Salvestrini, J.P.; Jani, B.E. Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree. J. Cryst. Growth 2016, 434, 72–76. [Google Scholar] [CrossRef]
- Bouazizia, H.; Bouzidia, M.; Chaaben, N.; Gmili, Y.E.; Salvestrini, J.P.; Bchetnia, A. Observation of the early stages of GaN thermal decomposition at 1200 °C under N2. Mater. Sci. Eng. B 2018, 227, 16–21. [Google Scholar]
- Huang, S.Y. Development of reclaimed pattern sapphire substrates technologies for GaN-based LEDs. ECS Trans. 2013, 53, 203–210. [Google Scholar] [CrossRef]
Gas-Flow Rates (cm3/min) | 0 | 10 | 25 |
---|---|---|---|
(wt.%) | (wt.%) | (wt.%) | |
Ga atom | 71.13 | 5.56 | 0.12 |
N atom | 20.43 | 2.14 | 0 |
Al atom | 0 | 38.81 | 45 |
O atom | 0 | 46.33 | 49.67 |
C atom | 8.18 | 7.16 | 6.8 |
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Huang, S.-Y.; Lin, J.-C.; Ou, S.-L. Study of GaN-Based Thermal Decomposition in Hydrogen Atmospheres for Substrate-Reclamation Processing. Materials 2018, 11, 2082. https://doi.org/10.3390/ma11112082
Huang S-Y, Lin J-C, Ou S-L. Study of GaN-Based Thermal Decomposition in Hydrogen Atmospheres for Substrate-Reclamation Processing. Materials. 2018; 11(11):2082. https://doi.org/10.3390/ma11112082
Chicago/Turabian StyleHuang, Shih-Yung, Jian-Cheng Lin, and Sin-Liang Ou. 2018. "Study of GaN-Based Thermal Decomposition in Hydrogen Atmospheres for Substrate-Reclamation Processing" Materials 11, no. 11: 2082. https://doi.org/10.3390/ma11112082