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Open AccessArticle

Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics

1
School of Mechanics and Engineering Science, Zhengzhou University, Zhengzhou 450001, Henan, China
2
School of Civil and Mechanical Engineering, Curtin University, Perth, WA 6845, Australia
3
School of Mechanical Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
4
Henan Key Engineering Laboratory for Anti-Fatigue Manufacturing Technology, Zhengzhou University, Zhengzhou 450001, Henan, China
*
Author to whom correspondence should be addressed.
Materials 2018, 11(10), 2000; https://doi.org/10.3390/ma11102000
Received: 18 September 2018 / Revised: 3 October 2018 / Accepted: 9 October 2018 / Published: 16 October 2018
(This article belongs to the Special Issue Electroceramic Materials)
In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications. View Full-Text
Keywords: GaN piezoelectric semiconductor ceramics; mechanical-electrical loading; intensity factor; fracture criterion GaN piezoelectric semiconductor ceramics; mechanical-electrical loading; intensity factor; fracture criterion
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MDPI and ACS Style

Qin, G.; Lu, C.; Zhang, X.; Zhao, M. Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics. Materials 2018, 11, 2000.

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