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Journal: Materials, 2018
Volume: 11
Number: 1871
1871
Article: High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature
Authors: by Rihui Yao, Xiaoqing Li, Zeke Zheng, Xiaochen Zhang, Mei Xiong, Song Xiao, Honglong Ning, Xiaofeng Wang, Yuxiang Wu and Junbiao Peng
Link: https://www.mdpi.com/1996-1944/11/10/1871

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