Yao, R.; Li, X.; Zheng, Z.; Zhang, X.; Xiong, M.; Xiao, S.; Ning, H.; Wang, X.; Wu, Y.; Peng, J.
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature. Materials 2018, 11, 1871.
https://doi.org/10.3390/ma11101871
AMA Style
Yao R, Li X, Zheng Z, Zhang X, Xiong M, Xiao S, Ning H, Wang X, Wu Y, Peng J.
High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature. Materials. 2018; 11(10):1871.
https://doi.org/10.3390/ma11101871
Chicago/Turabian Style
Yao, Rihui, Xiaoqing Li, Zeke Zheng, Xiaochen Zhang, Mei Xiong, Song Xiao, Honglong Ning, Xiaofeng Wang, Yuxiang Wu, and Junbiao Peng.
2018. "High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature" Materials 11, no. 10: 1871.
https://doi.org/10.3390/ma11101871
APA Style
Yao, R., Li, X., Zheng, Z., Zhang, X., Xiong, M., Xiao, S., Ning, H., Wang, X., Wu, Y., & Peng, J.
(2018). High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature. Materials, 11(10), 1871.
https://doi.org/10.3390/ma11101871