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Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

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Journal: Materials, 2018
Volume: 11
Number: 1794

Article: Characterisation of InGaN by Photoconductive Atomic Force Microscopy
Authors: by , , and
Link: https://www.mdpi.com/1996-1944/11/10/1794

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