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Open AccessFeature PaperArticle

Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

by Xue Zhang 1,†, Hyeonju Lee 1,†, Jungwon Kim 2, Eui-Jik Kim 3 and Jaehoon Park 1,*
1
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
2
Department of Environmental Sciences & Biotechnology, Hallym University, Chuncheon 24252, Korea
3
Department of Convergence Software, Hallym University, Chuncheon 24252, Korea
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Materials 2018, 11(1), 46; https://doi.org/10.3390/ma11010046
Received: 31 October 2017 / Revised: 28 December 2017 / Accepted: 28 December 2017 / Published: 28 December 2017
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide) and 0.30 (Sn oxide) to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol) for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0):Sn(0.9) oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance. View Full-Text
Keywords: oxide semiconductor; sol-gel precursor; gallium; tin; transistor oxide semiconductor; sol-gel precursor; gallium; tin; transistor
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MDPI and ACS Style

Zhang, X.; Lee, H.; Kim, J.; Kim, E.-J.; Park, J. Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors. Materials 2018, 11, 46.

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