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Materials 2017, 10(6), 645;

Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder

Department of Physics, National Chung Hsing University, Taichung 402, Taiwan
Department of Physics, National Dong Hwa University, Hualien 974, Taiwan
Department of Physics, National Chang-Hua University of Education, Changhua 500, Taiwan
Author to whom correspondence should be addressed.
Received: 26 April 2017 / Revised: 7 June 2017 / Accepted: 8 June 2017 / Published: 12 June 2017
(This article belongs to the Special Issue Metal-Insulator Transition)
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The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge delocalization in a strong magnetic field. When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to the interplay of disorder and quantum interference at low temperatures. View Full-Text
Keywords: nanoparticles; metal-insulator transition; Anderson localization nanoparticles; metal-insulator transition; Anderson localization

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Jiang, C.-W.; Ni, I.-C.; Hsieh, Y.-L.; Tzeng, S.-D.; Wu, C.-S.; Kuo, W. Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder. Materials 2017, 10, 645.

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