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Open AccessArticle

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

1
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea
2
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, USA
3
Department of Nanoenergy Engineering, Pusan National University, Busan 46241, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Horng-Tay Jeng
Materials 2017, 10(5), 459; https://doi.org/10.3390/ma10050459
Received: 20 March 2017 / Revised: 22 April 2017 / Accepted: 25 April 2017 / Published: 26 April 2017
(This article belongs to the Special Issue Metal-Insulator Transition)
Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm−3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode. View Full-Text
Keywords: memory; resistive switching; self-compliance; silicon nitride memory; resistive switching; self-compliance; silicon nitride
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MDPI and ACS Style

Kim, S.; Chang, Y.-F.; Kim, M.-H.; Kim, T.-H.; Kim, Y.; Park, B.-G. Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory. Materials 2017, 10, 459.

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