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Materials 2017, 10(4), 351;

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures

Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
Spectrophotometry Laboratory, National Institute of Metrology, Beijing 100013, China
Authors to whom correspondence should be addressed.
Academic Editor: Martin Byung-Guk Jun
Received: 9 February 2017 / Revised: 20 March 2017 / Accepted: 24 March 2017 / Published: 28 March 2017
(This article belongs to the Special Issue Ultrafast Laser-Based Manufacturing)
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Femtosecond (fs)-laser hyperdoped silicon has aroused great interest for applications in infrared photodetectors due to its special properties. Crystallinity and optical absorption influenced by co-hyperdoped nitrogen in surface microstructured silicon, prepared by fs-laser irradiation in gas mixture of SF6/NF3 and SF6/N2 were investigated. In both gas mixtures, nitrogen and sulfur were incorporated at average concentrations above 1019 atoms/cm3 in the 20–400 nm surface layer. Different crystallinity and optical absorption properties were observed for samples microstructured in the two gas mixtures. For samples prepared in SF6/N2, crystallinity and light absorption properties were similar to samples formed in SF6. Significant differences were observed amongst samples formed in SF6/NF3, which possess higher crystallinity and strong sub-band gap absorption. The differing crystallinity and light absorption rates between the two types of nitrogen co-hyperdoped silicon were attributed to different nitrogen configurations in the doped layer. This was induced by fs-laser irradiating silicon in the two N-containing gas mixtures. View Full-Text
Keywords: femtosecond laser; hyperdoped; nitrogen; crystallinity; sub-band gap absorption femtosecond laser; hyperdoped; nitrogen; crystallinity; sub-band gap absorption

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Sun, H.; Xiao, J.; Zhu, S.; Hu, Y.; Feng, G.; Zhuang, J.; Zhao, L. Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures. Materials 2017, 10, 351.

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