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Open AccessArticle

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

1
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
2
Department of Electrical Engineering, National United University, Miao-Li 36063, Taiwan
*
Author to whom correspondence should be addressed.
Materials 2017, 10(11), 1276; https://doi.org/10.3390/ma10111276
Received: 21 September 2017 / Revised: 18 October 2017 / Accepted: 2 November 2017 / Published: 7 November 2017
(This article belongs to the Section Structure Analysis and Characterization)
This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. View Full-Text
Keywords: nickel silicide; junctionless field-effect transistor; ultra thin body nickel silicide; junctionless field-effect transistor; ultra thin body
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MDPI and ACS Style

Lin, Y.-R.; Tsai, W.-T.; Wu, Y.-C.; Lin, Y.-H. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact. Materials 2017, 10, 1276.

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