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Materials 2017, 10(10), 1141;

Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
Institute of Nanomaterials, Chinese Culture University, Taipei 111, Taiwan
Authors to whom correspondence should be addressed.
Received: 5 August 2017 / Revised: 17 September 2017 / Accepted: 25 September 2017 / Published: 27 September 2017
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This study investigated the effects of Ti content and vacuum annealing on the microstructure evolution of TixFeCoNi (x = 0, 0.5, and 1) thin films and the underlying mechanisms. The as-deposited thin film transformed from an FCC (face center cubic) structure at x = 0 into an amorphous structure at x = 1, which can be explained by determining topological instability and a hard ball model. After annealing was performed at 1000 °C for 30 min, the films presented a layered structure comprising metal solid solutions and oxygen-deficient oxides, which can be major attributed to oxygen traces in the vacuum furnace. Different Ti contents provided various phase separation and layered structures. The underlying mechanism is mainly related to the competition among possible oxides in terms of free energy production at 1000 °C. View Full-Text
Keywords: sputtering; vacuum annealing; oxide; thin films sputtering; vacuum annealing; oxide; thin films

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Yang, Y.-C.; Yeh, J.-W.; Tsau, C.-H. Influence of Ti Content on the Partial Oxidation of TixFeCoNi Thin Films in Vacuum Annealing. Materials 2017, 10, 1141.

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