Bhadoria, S.; Dijkhuizen, F.; Zhang, X.; Ran, L.; Nee, H.-P.
Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip. Energies 2024, 17, 462.
https://doi.org/10.3390/en17020462
AMA Style
Bhadoria S, Dijkhuizen F, Zhang X, Ran L, Nee H-P.
Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip. Energies. 2024; 17(2):462.
https://doi.org/10.3390/en17020462
Chicago/Turabian Style
Bhadoria, Shubhangi, Frans Dijkhuizen, Xu Zhang, Li Ran, and Hans-Peter Nee.
2024. "Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip" Energies 17, no. 2: 462.
https://doi.org/10.3390/en17020462
APA Style
Bhadoria, S., Dijkhuizen, F., Zhang, X., Ran, L., & Nee, H.-P.
(2024). Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip. Energies, 17(2), 462.
https://doi.org/10.3390/en17020462
