Pennisi, G.; Pulvirenti, M.; Salvo, L.; Sciacca, A.G.; Cascino, S.; Laudani, A.; Salerno, N.; Rizzo, S.A.
Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions. Energies 2024, 17, 2651.
https://doi.org/10.3390/en17112651
AMA Style
Pennisi G, Pulvirenti M, Salvo L, Sciacca AG, Cascino S, Laudani A, Salerno N, Rizzo SA.
Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions. Energies. 2024; 17(11):2651.
https://doi.org/10.3390/en17112651
Chicago/Turabian Style
Pennisi, Giuseppe, Mario Pulvirenti, Luciano Salvo, Angelo Giuseppe Sciacca, Salvatore Cascino, Antonio Laudani, Nunzio Salerno, and Santi Agatino Rizzo.
2024. "Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions" Energies 17, no. 11: 2651.
https://doi.org/10.3390/en17112651
APA Style
Pennisi, G., Pulvirenti, M., Salvo, L., Sciacca, A. G., Cascino, S., Laudani, A., Salerno, N., & Rizzo, S. A.
(2024). Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions. Energies, 17(11), 2651.
https://doi.org/10.3390/en17112651
