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Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement

1
Photovoltaics Laboratory, Korea Institute of Energy Research, Daejeon 34129, Korea
2
Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
3
Department of Energy Environment Policy and Technology, Green School (Graduate School of Korea Energy and Environment), Korea University, Seoul 02841, Korea
*
Authors to whom correspondence should be addressed.
Energies 2020, 13(7), 1803; https://doi.org/10.3390/en13071803
Received: 6 March 2020 / Revised: 1 April 2020 / Accepted: 7 April 2020 / Published: 8 April 2020
(This article belongs to the Section Solar Energy and Photovoltaic Systems)
A thin silicon oxide (SiOx) layer (thickness: 1.5–2.0 nm) formed at an Al2O3/Si interface can enhance the interface properties. However, it is challenging to control the characteristics of thin SiOx layers because SiOx forms naturally during Al2O3 deposition on Si substrates. In this study, a ~1.5 nm-thick SiOx layer was inserted between Al2O3 and Si substrates by wet chemical oxidation to improve the passivation properties. The acidic solutions used for wet chemical oxidation were HCl:H2O2:H2O, H2SO4:H2O2:H2O, and HNO3. The thicknesses of SiOx layers formed in the acidic solutions were ~1.48, ~1.32, and ~1.50 nm for SiOx-HCl, SiOx-H2SO4, and SiOx-HNO3, respectively. The leakage current characteristics of SiOx-HNO3 were better than those of the oxide layers formed in the other acidic solutions. After depositing a ~10 nm-thick Al2O3 on an SiOx-acidic/Si structure, we measured the effective carrier lifetime using quasi steady-state photoconductance and examined the interfacial properties of Al2O3/SiOx-acidic/Si using surface carrier lifetime simulation and capacitance–voltage measurement. The effective carrier lifetime of Al2O3/SiOx-HNO3/Si was relatively high (~400 μs), resulting from the low surface defect density (2.35–2.88 × 1010 cm−2eV−1). The oxide layer inserted between Al2O3 and Si substrates by wet chemical oxidation helped improve the Al2O3/Si interface properties. View Full-Text
Keywords: aluminum oxide; silicon oxide; quasi steady-state photoconductance; surface passivation; crystalline silicon (c-Si) solar cell; plasma-assisted atomic layer deposition aluminum oxide; silicon oxide; quasi steady-state photoconductance; surface passivation; crystalline silicon (c-Si) solar cell; plasma-assisted atomic layer deposition
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MDPI and ACS Style

Min, K.H.; Choi, S.; Jeong, M.S.; Park, S.; Kang, M.G.; Lee, J.I.; Kang, Y.; Kim, D.; Lee, H.-S.; Song, H.-e. Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement. Energies 2020, 13, 1803. https://doi.org/10.3390/en13071803

AMA Style

Min KH, Choi S, Jeong MS, Park S, Kang MG, Lee JI, Kang Y, Kim D, Lee H-S, Song H-e. Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement. Energies. 2020; 13(7):1803. https://doi.org/10.3390/en13071803

Chicago/Turabian Style

Min, Kwan H., Sungjin Choi, Myeong S. Jeong, Sungeun Park, Min G. Kang, Jeong I. Lee, Yoonmook Kang, Donghwan Kim, Hae-Seok Lee, and Hee-eun Song. 2020. "Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance–Voltage Measurement" Energies 13, no. 7: 1803. https://doi.org/10.3390/en13071803

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