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Open AccessArticle

The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells

1
Energy Convergence Technology Center, Silla University, Busan 46958, Korea
2
Research Center, Advanced Vacuum and Clean Equipment Optimizer Co., Ltd., Daegu 42724, Korea
3
School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
4
Division of Materials Science and Engineering, Silla University, Busan 46958, Korea
*
Author to whom correspondence should be addressed.
Energies 2020, 13(2), 412; https://doi.org/10.3390/en13020412
Received: 16 December 2019 / Revised: 10 January 2020 / Accepted: 11 January 2020 / Published: 15 January 2020
In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm2 cells. View Full-Text
Keywords: Cu(In,Ga)(S,Se)2 absorber layer; buffer layer; Zn(O,S) temperature window; Zn(O,S) ratio; Zn(O,S) thickness; atomic layer deposition; solar cell Cu(In,Ga)(S,Se)2 absorber layer; buffer layer; Zn(O,S) temperature window; Zn(O,S) ratio; Zn(O,S) thickness; atomic layer deposition; solar cell
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Choi, W.-J.; Park, W.W.; Kim, Y.; Son, C.S.; Hwang, D. The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells. Energies 2020, 13, 412.

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