Search Results (6)

The Southern Hunan area is located in the superposition of the Qin-Hang Cu-Pb-Zn polymetallic ore belt and the Nanling W-Sn-Mo polymetallic ore belt, which is an important window to study the mineralization of W-Sn-Mo and Cu-Pb-Zn polymetallic deposits. The Baoshan deposit is a large Cu-Pb-Zn polymetallic deposit in Southern Hunan Province with obvious zones of Cu mineralization and Pb-Zn mineralization: the central part of the Baoshan deposit demonstrates contact metasomatic (skarn) Cu mineralization, while the western, northern and eastern parts demonstrate hydrothermal vein Pb-Zn mineralization. However, the origin and evolution of the ore-forming fluid and mechanism of Cu and Pb-Zn mineral precipitation are still unclear. The metallogenic process of the Baoshan Cu-Pb-Zn deposit can be divided into four stages: (1) the early skarn stage (S₁); (2) the late skarn stage (S₂); (3) the Cu-Fe sulfide stage (S₃); and (4) the Pb-Zn sulfide stage (S₄). The results of microtemperature measurements and a Raman spectrometric analysis of fluid inclusions show that the ore-forming fluid was the H₂O-NaCl (-CO₂ ± N₂ ± C₂H₆) system in the skarn stages (S₁ + S₂) and changed into the H₂O-NaCl-CO₂ (±N₂ ± C₂H₆) system in the sulfide stages (S₃ + S₄). The temperature (S₁: 436.6~548.2 °C; S₂: 344.1~435.1 °C; S₃: 134.1~413.1 °C; S₄: 183.9~261.0 °C) and salinity (S₁: 17.4~51.2 wt.%NaClequiv; S₂: 13.6~41.7 wt.%NaClequiv; S₃: 1.2~32.3 wt.%NaClequiv; S₄: 1.8~9.6 wt.%NaClequiv) showed a downward trend from the early to late stages. From the skarn stages (S₁ + S₂) to the sulfide stages (S₃ + S₄), the ore-forming pressure results from the static rock pressure and the hydrostatic pressure, and the ore-forming depth is estimated to be about three to six km. The C-H-O isotopic compositions of hydrothermal minerals such as quartz and calcite indicate that the ore-forming fluid is predominately magmatic fluid, but a significant amount of meteoric water is added in the Pb-Zn sulfide stage (S₄). The formation of the mineralization zonation of the Baoshan deposit is the result of many factors (e.g., stratigraphy, structure and metal precipitation mechanism): the Cu mineralization is controlled by the contact zone, and the Pb-Zn mineralization is controlled by the fault. In addition, the precipitation of Cu is mainly controlled by fluid boiling, while the precipitation of Pb and Zn is mainly controlled by the mixing of magmatic fluid and meteoric water. Full article

The mass fraction of 0.01 wt% ZnO nanofluid was prepared via the two-step method. The measurement verifies that ZnO nanofluids have better transmission characteristics in the frequency division window range of 400–1200 nm. At the same time, it has good absorption characteristics in ultraviolet and near-infrared bands, which meets the application conditions of the spectral beam-splitting module of the PV/T system. A spectral beam-splitting module of the PV/T system was designed. The simplified physical model was established in ANSYS 14.0. The flow field and convective heat transfer were simulated for different arrangements of the interlayer inlet to obtain a more ideal and uniform temperature distribution to improve the system’s comprehensive efficiency. The results show that the fluid flow in the interlayer under case II is more uniform, and the temperature field distribution is better than other arrangements. Hence, this work could provide a reference for optimising nanofluid flow within a spectral beam-splitting module. Full article

Aqueous CdTe quantum dots solar cells have been successfully fabricated by the blade coating method on the magnesium zinc oxide (Zn_1−xMg_xO or ZMO) window layer. Compared with the ZMO mono-window layer, the ZMO/CdS bi-window layer can decrease the interface recombination effectively due to the lower lattice mismatch and fast interdiffusion between CdS and CdTe. Moreover, the high temperature annealing of the CdTe quantum dots absorbed layer passivates the grain boundary of the CdTe crystalline via the replacement reaction of tellurium with sulfur. Finally, the conversion efficiency of our aqueous CdTe quantum dots solar device is improved from 3.21% to 8.06% with the introduction of the CdS interlayer and high temperature CdCl₂ annealing. Our aqueous CdTe quantum dots solar devices show a large open circuit voltage and fill factor which are comparable with the conventional devices that are fabricated with organic CdTe quantum dots. We believe that it is the spike-like conduction band alignment between the ZMO and CdTe absorbed layer that reduces the majority carrier concentration, leading to the decrease in interface recombination probability. Full article

In this paper, a Mg-doped ZnO (MZO) thin film is prepared by a simple solution process under ambient conditions and is used as the window layer for PbS solar cells due to a wide n-type bandgap. Moreover, a thin layer of ZnO nanocrystals (NCs) was deposited on the MZO to reduce carrier recombination at the interface for inverted PbS quantum dot solar cells with the configuration Indium Tin Oxides (ITO)/MZO/ZnO NC (w/o)/PbS/Au. The effect of film thickness and annealing temperature of MZO and ZnO NC on the performance of PbS quantum dot solar cells was investigated in detail. It was found that without the ZnO NC thin layer, the highest power conversion efficiency(PCE) of 5.52% was obtained in the case of a device with an MZO thickness of 50 nm. When a thin layer of ZnO NC was introduced between MZO and PbS quantum dot film, the PCE of the champion device was greatly improved to 7.06% due to the decreased interface recombination. The usage of the MZO buffer layer along with the ZnO NC interface passivation technique is expected to further improve the performance of quantum dot solar cells. Full article

Copper Zinc Tin Sulfide (C₂ZTS₄) solar cells have become a fascinating research topic due to several advantages of the C₂ZTS₄ absorber layer, such as having non-toxic and abundantly available components. Superstrate structured C₂ZTS₄ solar cells were fabricated on the top of a fluorine-doped tin oxide (FTO) substrate with a spray pyrolysis method from the window layer to the absorber layer. Titanium dioxide (TiO₂) and indium sulfide (In₂S₃) were used as the window and buffer layer, respectively. The source materials for the C₂ZTS₄ and buffer layers were all aqueous-based solutions. The metallic component ratio, Cu/(Zn + Sn), and the sulfur concentration in the solutions were systematically investigated. The optimum ratio of Cu/(Zn + Sn) in the film is about 0.785, while 0.18 M thiourea in the solution is the best condition for high performance. The C₂ZTS₄ layers deposited at lower temperatures (<360 °C) yielded a low quality resulting in low current density (J_SC). On the other hand, the C₂ZTS₄ layers deposited at high temperature (~400 °C) showed a low fill factor (FF) without degradation of the open-circuit voltage (V_OC) and J_SC due to the junction degradation and high contact resistance between the absorber layer and metal contact. The best cell efficiency, V_OC, J_SC, and fill factor achieved were 3.34%, 383 mV, 24.6 mA/cm², and 37.7%, respectively. Full article

In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)₂-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se)₂ solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm². These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H₂S/H₂O+H₂S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm² cells. Full article