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Energies
Volume 12
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10.3390/en12132541
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Article

Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer

by
Chia-Hsun Hsu
1,
Xiao-Ying Zhang
1,
Hai-Jun Lin
1,
Shui-Yang Lien
1,2,*,
Yun-Shao Cho
2 and
Chang-Sin Ye
3
1
School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China
2
Department of Materials Science and Engineering, Da-Yeh University, Chunghwa 51595, Taiwan
3
Metal Industries Research & Development Centre Opto-Electronics System Section, Kaohsiung 81160, Taiwan
*
Author to whom correspondence should be addressed.
Energies 2019, 12(13), 2541; https://doi.org/10.3390/en12132541
Submission received: 5 May 2019 / Revised: 21 June 2019 / Accepted: 23 June 2019 / Published: 2 July 2019
(This article belongs to the Special Issue Selected Papers from IEEE ICKII 2019)
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Abstract

In this study, p-type amorphous silicon oxide (a-SiOx) films are deposited using a radio-frequency inductively-coupled plasma chemical vapor deposition system. Effects of the CO2 gas flow rate on film properties and crystalline silicon heterojunction (HJ) solar cell performance are investigated. The experimental results show that the band gap of the a-SiOx film can reach 2.1 eV at CO2 flow rate of 10 standard cubic centimeters per minute (sccm), but the conductivity of the film deteriorates. In the device simulation, the transparent conducting oxide and contact resistance are not taken into account. The electrodes are assumed to be perfectly conductive and transparent. The simulation result shows that there is a tradeoff between the increase in the band gap and the reduction in conductivity at increasing CO2 flow rate, and the balance occurs at the flow rate of six sccm, corresponding to a band gap of 1.95 eV, an oxygen content of 34%, and a conductivity of 3.3 S/cm. The best simulated conversion efficiency is 25.58%, with an open-circuit voltage of 741 mV, a short-circuit current density of 42.3 mA/cm2, and a fill factor of 0.816%.
Keywords: heterojunction; crystalline silicon; solar cell; silicon oxide heterojunction; crystalline silicon; solar cell; silicon oxide

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MDPI and ACS Style

Hsu, C.-H.; Zhang, X.-Y.; Lin, H.-J.; Lien, S.-Y.; Cho, Y.-S.; Ye, C.-S. Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer. Energies 2019, 12, 2541. https://doi.org/10.3390/en12132541

AMA Style

Hsu C-H, Zhang X-Y, Lin H-J, Lien S-Y, Cho Y-S, Ye C-S. Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer. Energies. 2019; 12(13):2541. https://doi.org/10.3390/en12132541

Chicago/Turabian Style

Hsu, Chia-Hsun, Xiao-Ying Zhang, Hai-Jun Lin, Shui-Yang Lien, Yun-Shao Cho, and Chang-Sin Ye. 2019. "Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer" Energies 12, no. 13: 2541. https://doi.org/10.3390/en12132541

APA Style

Hsu, C.-H., Zhang, X.-Y., Lin, H.-J., Lien, S.-Y., Cho, Y.-S., & Ye, C.-S. (2019). Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer. Energies, 12(13), 2541. https://doi.org/10.3390/en12132541

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