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Open AccessArticle

Fault Detection and Location of IGBT Short-Circuit Failure in Modular Multilevel Converters

Department of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China
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Author to whom correspondence should be addressed.
Energies 2018, 11(6), 1492; https://doi.org/10.3390/en11061492
Received: 14 May 2018 / Revised: 1 June 2018 / Accepted: 5 June 2018 / Published: 7 June 2018
A single fault detection and location for Modular Multilevel Converter (MMC) is of great significance, as numbers of sub-modules (SMs) in MMC are connected in series. In this paper, a novel fault detection and location method is proposed for MMC in terms of the Insulated Gate Bipolar Translator (IGBT) short-circuit failure in SM. The characteristics of IGBT short-circuit failures are analyzed, based on which a Differential Comparison Low-Voltage Detection Method (DCLVDM) is proposed to detect the short-circuit fault. Lastly, the faulty IGBT is located based on the capacitor voltage of the faulty SM by Continuous Wavelet Transform (CWT). Simulations have been done in the simulation software PSCAD/EMTDC and the results confirm the validity and reliability of the proposed method. View Full-Text
Keywords: modular multilevel converter; IGBT short-circuit; fault detection; fault location; Differential Comparison Low-Voltage Detection Method (DCLVDM); Continuous Wavelet Transform modular multilevel converter; IGBT short-circuit; fault detection; fault location; Differential Comparison Low-Voltage Detection Method (DCLVDM); Continuous Wavelet Transform
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Jiang, B.; Gong, Y.; Li, Y. Fault Detection and Location of IGBT Short-Circuit Failure in Modular Multilevel Converters. Energies 2018, 11, 1492.

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