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Open AccessArticle

IGBT Dynamic Loss Reduction through Device Level Soft Switching

1
School of Automation Engineering, University of Electronic Science and Technology of China, West High-Tech District, Chengdu 611731, China
2
Department of Electrical and Computer Engineering, NC State University, Raleigh, NC 27695, USA
3
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712, USA
*
Author to whom correspondence should be addressed.
Energies 2018, 11(5), 1182; https://doi.org/10.3390/en11051182
Received: 30 March 2018 / Revised: 3 May 2018 / Accepted: 7 May 2018 / Published: 8 May 2018
Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC) turn-on and Zero Current Hard Voltage (ZCHV) turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC) inverter are given to validate the effectiveness of the device level hybrid soft switching method application. View Full-Text
Keywords: dynamic switching loss; Si IGBT; SiC MOSFET; hybrid switching method; zero voltage hard current (ZVHC); zero current hard voltage (ZCHV); zero current zero voltage (ZCZV) dynamic switching loss; Si IGBT; SiC MOSFET; hybrid switching method; zero voltage hard current (ZVHC); zero current hard voltage (ZCHV); zero current zero voltage (ZCZV)
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MDPI and ACS Style

Ma, L.; Xu, H.; Huang, A.Q.; Zou, J.; Li, K. IGBT Dynamic Loss Reduction through Device Level Soft Switching. Energies 2018, 11, 1182.

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