Figure 1.
Topology proposed for the study.
Figure 1.
Topology proposed for the study.
Figure 2.
Current trajectory in V-I and CSI converter V-I. (a) First state of operation; (b) second state of operation.
Figure 2.
Current trajectory in V-I and CSI converter V-I. (a) First state of operation; (b) second state of operation.
Figure 3.
Schematic of operation and synchronization of power converters.
Figure 3.
Schematic of operation and synchronization of power converters.
Figure 4.
V-I converter: first state of operation circuit (supplying energy).
Figure 4.
V-I converter: first state of operation circuit (supplying energy).
Figure 5.
Simulation results of the PI controller. (a) Output current response, (b) detail of the current reference at 10 A.
Figure 5.
Simulation results of the PI controller. (a) Output current response, (b) detail of the current reference at 10 A.
Figure 6.
Tuning of the PI controller for the V-I converter response to a step.
Figure 6.
Tuning of the PI controller for the V-I converter response to a step.
Figure 7.
Flowchart of method proposed.
Figure 7.
Flowchart of method proposed.
Figure 8.
Signals carriers to different frequencies and angles. (a) Fs(V-I) = 15 kHz, Fs(CSI) = 30 kHz, angle = 0°; (b) Fs(V-I) = 15 kHz, Fs(CSI) = 30 kHz angle = 90°.
Figure 8.
Signals carriers to different frequencies and angles. (a) Fs(V-I) = 15 kHz, Fs(CSI) = 30 kHz, angle = 0°; (b) Fs(V-I) = 15 kHz, Fs(CSI) = 30 kHz angle = 90°.
Figure 9.
Gating signal generation.
Figure 9.
Gating signal generation.
Figure 10.
Map gating signals generations. (a) Carrier and modulating signals; (b) pulse generator conventional pulse-width modulation (PWM); (c) commutation basic; (d) pulses of short circuit; (e) pulses of distribution; (f) signal of distribution; (g) signals of gating.
Figure 10.
Map gating signals generations. (a) Carrier and modulating signals; (b) pulse generator conventional pulse-width modulation (PWM); (c) commutation basic; (d) pulses of short circuit; (e) pulses of distribution; (f) signal of distribution; (g) signals of gating.
Figure 11.
Total harmonic distortion (THD) spectrum results. (a) THD spectrum for situation A, (b) THD spectrum for situation B, (c) THD spectrum for situation C, (d) comparative results graph.
Figure 11.
Total harmonic distortion (THD) spectrum results. (a) THD spectrum for situation A, (b) THD spectrum for situation B, (c) THD spectrum for situation C, (d) comparative results graph.
Figure 12.
Switching pattern signals for V-I–CSI to fsvi = 35 kHz and fscsi = 70 kHz.
Figure 12.
Switching pattern signals for V-I–CSI to fsvi = 35 kHz and fscsi = 70 kHz.
Figure 13.
Switching pattern signals in V-I-CSI to fsvi = 70 kHz and fScsi = 35 kHz.
Figure 13.
Switching pattern signals in V-I-CSI to fsvi = 70 kHz and fScsi = 35 kHz.
Figure 14.
THD comparison. (a) THD in the DC output current in V-I–CSI to fsvi = 35 kHz and fscsi = 70 kHz. (b) THD in the DC output current in V-I–CSI to fsvi = 70 kHz and fscsi = 35 kHz.
Figure 14.
THD comparison. (a) THD in the DC output current in V-I–CSI to fsvi = 35 kHz and fscsi = 70 kHz. (b) THD in the DC output current in V-I–CSI to fsvi = 70 kHz and fscsi = 35 kHz.
Figure 15.
THD results for fsvi = 35 kHz and fscsi = 70 kHz when the carrier phase is sifting.
Figure 15.
THD results for fsvi = 35 kHz and fscsi = 70 kHz when the carrier phase is sifting.
Figure 16.
Map signal in CSI and V-I with 0° of phase shift between the signal carrier.
Figure 16.
Map signal in CSI and V-I with 0° of phase shift between the signal carrier.
Figure 17.
Signal map in CSI and V-I: (a) Situation for 90° of phase shift, (b) situation for 120° of phase shift.
Figure 17.
Signal map in CSI and V-I: (a) Situation for 90° of phase shift, (b) situation for 120° of phase shift.
Figure 18.
Simulation results of the method for the second part: (a) currents of output in situation B and a 90° shift angle; (b) THD analysis of the output current.
Figure 18.
Simulation results of the method for the second part: (a) currents of output in situation B and a 90° shift angle; (b) THD analysis of the output current.
Figure 19.
Simulation results for fSV-I = 70 kHz and fscsi= 35 kHz. (a) Situation at 0° of shift angle. (b) Situation at 90° of shift angle. (c) Situation at 120° of shift-angle.
Figure 19.
Simulation results for fSV-I = 70 kHz and fscsi= 35 kHz. (a) Situation at 0° of shift angle. (b) Situation at 90° of shift angle. (c) Situation at 120° of shift-angle.
Figure 20.
Result of analysis in the V-I power converter. (a) Power losses (b) Efficiency.
Figure 20.
Result of analysis in the V-I power converter. (a) Power losses (b) Efficiency.
Figure 21.
Power losses and efficiency in the CSI power converter.
Figure 21.
Power losses and efficiency in the CSI power converter.
Figure 22.
Power losses in permanent magnet synchronous motor (PMSM)with shift angle in 0°, 60°, 90°, and 120° in the power converters.
Figure 22.
Power losses in permanent magnet synchronous motor (PMSM)with shift angle in 0°, 60°, 90°, and 120° in the power converters.
Figure 23.
Efficiency in an electric motor for shift angles of 0°, 60°, 90°, and 120° in the power converters.
Figure 23.
Efficiency in an electric motor for shift angles of 0°, 60°, 90°, and 120° in the power converters.
Figure 24.
Efficiency in all systems.
Figure 24.
Efficiency in all systems.
Figure 25.
Power losses comparison results. (a) Power losses in V-I SiC vs. DC–DC hybrid topologies. (b) Power losses in CSI SiC vs. VSI hybrid topologies.
Figure 25.
Power losses comparison results. (a) Power losses in V-I SiC vs. DC–DC hybrid topologies. (b) Power losses in CSI SiC vs. VSI hybrid topologies.
Figure 26.
Results in VSI topology. (a) Current of output in VSI topology. (b) THD spectrum result for 6.76%.
Figure 26.
Results in VSI topology. (a) Current of output in VSI topology. (b) THD spectrum result for 6.76%.
Table 1.
Parameters of simulations of the PI control.
Table 1.
Parameters of simulations of the PI control.
Parameter | Values |
---|
Kp | 4.75769580834167 |
Ki | 460.186624758197 |
Rise time | 0.00488 s |
Settling time | 0.00838 s |
Overshoot | 0.0198% |
Peak | 1 |
Phase margin | 889 deg @ 439 rad/s |
Table 2.
Parameters of simulations.
Table 2.
Parameters of simulations.
Parameter | Values |
---|
Vdc | 100 V |
Current | 10 A |
Inductor L1 | 10 mH |
Frequency Fs | 35 kHz |
Capacitor C1, C2, C3 | 1 5 μF |
Index of Modulation m | 0.8 |
L Load | 1.5 mH |
R Load | 1.3 Ω |
Table 3.
THD result with angle-shift and sequence.
Table 3.
THD result with angle-shift and sequence.
Angle of Shift | Values of THD | Sequence ON OFF |
---|
0° | 2.10% | C*CC*CC|C*CC*CC |
30° | 2.22% | CC*CC*C|CC*CC*C |
60° | 2.39% | *CC*C*C|*CC*C*C |
90° | 1.98% | C*CC*CC|C*CC*CC |
120° | 2.25% | *CC*CC*|*CC*CC* |
150° | 2.13% | C*CCC*C|C*CCC*C |
180° | 2.15% | CC*C*CC|CC*C*CC |
Table 4.
Result of THD with an angle shift.
Table 4.
Result of THD with an angle shift.
Shift-Angle | Values of THD |
---|
0° | 2.29% |
90° | 2.74% |
120° | 2.45% |
Table 5.
Parameters of simulations.
Table 5.
Parameters of simulations.
Parameter | Mosfet SiC | Parameter | Diode SiC |
---|
Model | SCT2450KE | Model | C3D10065I |
Voltage DS | 1200 V | VRRM (V) | 650 V |
Current | 10 A | QC (nC) | 110 nC |
Rds | 450 mΩ | IF (A) | 10 A |
Power Dissipation | 85 W | | |
Operating Junction | 175 °C | | |
Table 6.
Inductor core losses.
Table 6.
Inductor core losses.
Parameter | Value |
---|
Hysteresis losses | 0.0517 W/cm3 |
Eddy current losses | 0.2738 W/cm3 |
Copper losses | 29.93 W/cm3 |
Total of losses in the inductor | 30.255 W/cm3 |
Table 7.
Parameters of simulations.
Table 7.
Parameters of simulations.
System | Efficiency at 0° | Efficiency at 90° | Power Out |
---|
V-I | 88.25% | 90.1% | 1 kW |
CSI | 93.8% | 94.22% | 1.5 kW |
Motor | 91.2% | 91.38% | 1.5 kW |
Average | 91.08% | 92% | 1.5 kW |
Table 8.
Parameters of simulations.
Table 8.
Parameters of simulations.
Parameter | Mosfet SiC | Parameter | Diode SiC |
---|
Model | HGTG30N60BD3 | Model | C3D10065I |
Voltage CE | 600 V | VRRM (V) | 650 V |
Current | 15 A | QC (nC) | 110 nC |
Power Dissipation | 208 W | IF (A) | 10 A |
Operating Junction | 150 °C | | |
Table 9.
Power losses between SiC topology and Hybrid Topology.
Table 9.
Power losses between SiC topology and Hybrid Topology.
Parameter | All-SiC Topology V-I–CSI | Hybrid Topology DC/DC–VSI |
---|
Pconduction Mosfet SiC/IGBTs | 44.98 W | 134.94 W | 64.9 W | 194.24 W |
Pconduction diodes | 43.16 W | 129.48 W | 44.57 W | 129.42 W |
Pswitching SiC/IGBTs | 22.87 W | 26.88 W | 27.88 W | 45.08 W |
Pswitching diodes | 0.0296 W | 0.178 W | 0.0006 W | 0.036 W |
Total | 402.51 W | 506.29 W |