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Sensors 2008, 8(10), 6566-6594;

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

University P. & M. Curie – Paris 6, SYEL – BC 252, 4 Place Jussieu, 75252 Paris Cedex 05, France
Institut des Nanotechnologies de Lyon (INL), CNRS UMR5270, University Claude Bernard Lyon 1, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
City University London, DEEIE, UNESCO Chair, Northampton Square, London EC1V OHB, UK
Author to whom correspondence should be addressed.
Received: 8 July 2008 / Revised: 4 September 2008 / Accepted: 17 October 2008 / Published: 23 October 2008
(This article belongs to the Special Issue Integrated High-performance Imagers)
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A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications. View Full-Text
Keywords: Buried Double Junction photodetector; CMOS Image Sensor Buried Double Junction photodetector; CMOS Image Sensor

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Feruglio, S.; Lu, G.-N.; Garda, P.; Vasilescu, G. A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications. Sensors 2008, 8, 6566-6594.

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